OFERTA FORMATIVA DCM - FCT/UNL
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AJA ATC-1800 F Sputtering
Location: Clean room CEMOP – thin-film deposition lab
Responsible: Luís Pereira
Description:
Computer-controlled tool with 3 RF + 1 DC magnetron sputtering sources and RF substrate bias for thin film deposition on up to 6” wafers. Substrate temperature controllable between RT and 850 °C.
Specifications:
- 3x RF generators and automated matching boxes, up to 600 W
- 1x DC generator, up to 750 W
- 3x magnetron sources for 3” targets, with adjustable tilting angle
- 1x magnetron source for 2” targets, with adjustable tilting angle
- RF substrate biasing up to 50 W, for surface cleaning/modification (before deposition) or tuning of deposited film properties (during deposition)
- Load-lock chamber for fast and low-contamination substrate loading/unloading (only for substrates up to 4”)
- Controllable substrate rotation for improved uniformity
- Substrate temperature up to 350 °C (6” substrates) or 850 °C (4” substrates)
- 4 gas lines with mass flow controllers (Ar, O2, N2 and H2)
- Phase-II J computer control for semi-automated processes (all processes except substrate loading/unloading and substrate rotation can be saved as recipes and run automatically)
Responsible: Luís Pereira
Description:
Computer-controlled tool with 3 RF + 1 DC magnetron sputtering sources and RF substrate bias for thin film deposition on up to 6” wafers. Substrate temperature controllable between RT and 850 °C.
Specifications:
- 3x RF generators and automated matching boxes, up to 600 W
- 1x DC generator, up to 750 W
- 3x magnetron sources for 3” targets, with adjustable tilting angle
- 1x magnetron source for 2” targets, with adjustable tilting angle
- RF substrate biasing up to 50 W, for surface cleaning/modification (before deposition) or tuning of deposited film properties (during deposition)
- Load-lock chamber for fast and low-contamination substrate loading/unloading (only for substrates up to 4”)
- Controllable substrate rotation for improved uniformity
- Substrate temperature up to 350 °C (6” substrates) or 850 °C (4” substrates)
- 4 gas lines with mass flow controllers (Ar, O2, N2 and H2)
- Phase-II J computer control for semi-automated processes (all processes except substrate loading/unloading and substrate rotation can be saved as recipes and run automatically)
