Location: Electrical Characterization Lab
Responsible: Joana Pinto
Description:
The most widely employed method for measuring semiconductor resistivities is the four-point-probe technique, which is easy to implement, nondestructive, and especially convenient for probing the wafers used in device fabrication. Resistivity measurements are made on the flat ends of the crystal, were current (I) is passed through the outer probes and voltages (V) measured between the inner probes.
Specifications:
• Maximum substrate size: 6”
• Current source: 10 nA to 10 mA