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2016
Bahubalindruni PG a, Tavares V c, Barquinha P b, Martins R b, Fortunato E b.  2016.  Basic analog and digital circuits with a-IGZO TFTs. 2016 13th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design, SMACD 2016. Abstract
Moldovan O a, Castro-Carranza A b, Cerdeira A c, Estrada M c, Barquinha P d, Martins R d, Fortunato E d, Miljakovic S e, Iñiguez B a.  2016.  A compact model and direct parameters extraction techniques For amorphous gallium-indium-zinc-oxide thin film transistors. Solid-State Electronics. 126:81-86. Abstract
b c Liu A a, b c Liu G a, b c Zhu H a, Shin B d, Fortunato E e, Martins R e, b c Shan F a.  2016.  Eco-friendly, solution-processed In-W-O thin films and their applications in low-voltage, high-performance transistors. Journal of Materials Chemistry C. 4:4478-4484. Abstract
b c Shan F a, b c Liu A a, Zhu H c, Kong W a, Liu J c, Shin B d, Fortunato E e, Martins R e, b c Liu G a.  2016.  High-mobility p-type NiOx thin-film transistors processed at low temperatures with Al2O3 high-k dielectric. Journal of Materials Chemistry C. 4:9438-9444. Abstract
b Deuermeier J a, Wardenga HF b, Morasch J b, c Siol S b, Nandy S a, Calmeiro T a, Martins R a, Klein A b, Fortunato E a.  2016.  Highly conductive grain boundaries in copper oxide thin films. Journal of Applied Physics. 119 Abstract
b c Liu A a, b c Liu G a, b c Zhu H a, Shin B d, Fortunato E e, Martins R e, b c Shan F a.  2016.  Hole mobility modulation of solution-processed nickel oxide thin-film transistor based on high-k dielectric. Applied Physics Letters. 108 Abstract
b Kiazadeh A a, c Gomes HL b, Barquinha P a, Martins J a, Rovisco A a, Pinto JV a, Martins R a, Fortunato E a.  2016.  Improving positive and negative bias illumination stress stability in parylene passivated IGZO transistors. Applied Physics Letters. 109 Abstract
Bahubalindruni PG a, Kiazadeh A b, Sacchetti A b, Martins J b, Rovisco A b, Tavares VG c, Martins R b, Fortunato E b, Barquinha P b.  2016.  Influence of Channel Length Scaling on InGaZnO TFTs Characteristics: Unity Current-Gain Cutoff Frequency, Intrinsic Voltage-Gain, and On-Resistance. Journal of Display Technology. 12:515-518. Abstract
Bahubalindrun P a, Tavares V b, Barquinha P a, De Oliveira PG b, Martins R a, Fortunato E a.  2016.  InGaZnO TFT behavioral model for IC design. Analog Integrated Circuits and Signal Processing. 87:73-80. Abstract
Bahubalindruni PG a, Tavares VG b, Borme J c, De Oliveira PG b, Martins R a, Fortunato E a, Barquinha P a.  2016.  InGaZnO thin-film-transistor-based four-quadrant high-gain analog multiplier on glass. IEEE Electron Device Letters. 37:419-421. Abstract
Jin JW a, Nathan A b, Barquinha P c, Pereira L c, Fortunato E c, Martins R c, Cobb B d.  2016.  Interpreting anomalies observed in oxide semiconductor TFTs under negative and positive bias stress. AIP Advances. 6 Abstract
b c Zhu C a, b c Liu A a, b c Liu G a, b c Jiang G a, b c Meng Y a, Fortunato E d, Martins R d, b c Shan F a.  2016.  Low-temperature, nontoxic water-induced high-: K zirconium oxide dielectrics for low-voltage, high-performance oxide thin-film transistors. Journal of Materials Chemistry C. 4:10715-10721. Abstract
c Bahubalindruni PG a, Tavares VG b, Fortunato E a, Martins R a, Barquinha P a.  2016.  Novel linear analog-adder using a-IGZO TFTs. Proceedings - IEEE International Symposium on Circuits and Systems. 2016-July:2098-2101. Abstract
Correia A a, Goes J a, Barquinha P b.  2016.  Oxide TFTs on flexible substrates for designing and fabricating analog-to-digital converters. IFIP Advances in Information and Communication Technology. 470:533-541. Abstract
b c Jiang G a, b c Liu A a, b c Liu G a, b c Zhu C a, b c Meng Y a, Shin B d, Fortunato E e, Martins R e, b c Shan F a.  2016.  Solution-processed high-k magnesium oxide dielectrics for low-voltage oxide thin-film transistors. Applied Physics Letters. 109 Abstract
Martins J a, Barquinha P a, Goes J b.  2016.  TCAD simulation of amorphous indium-gallium-zinc oxide thin-film transistors. IFIP Advances in Information and Communication Technology. 470:551-557. Abstract
Niang KM a, Barquinha PMC b, Martins RFP b, Cobb B c, Powell MJ d, Flewitt AJ a.  2016.  A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under positive gate bias stress. Applied Physics Letters. 108 Abstract
Carlos E, Branquinho R, Kiazadeh A, Barquinha P, Martins R, Fortunato E.  2016.  UV-Mediated Photochemical Treatment for Low-Temperature Oxide-Based Thin-Film Transistors. ACS Applied Materials and Interfaces. 8:31100-31108. Abstract