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2016
Lorenz M, Ramachandra Rao MS, Venkatesan T, Fortunato E, Barquinha P, Branquinho R, Salgueiro D, Martins R, Carlos E, Liu A et al..  2016.  The 2016 oxide electronic materials and oxide interfaces roadmap. Journal of Physics D: Applied Physics. 49 Abstract
Moldovan O a, Castro-Carranza A b, Cerdeira A c, Estrada M c, Barquinha P d, Martins R d, Fortunato E d, Miljakovic S e, Iñiguez B a.  2016.  A compact model and direct parameters extraction techniques For amorphous gallium-indium-zinc-oxide thin film transistors. Solid-State Electronics. 126:81-86. Abstract
b Deuermeier J a, Wardenga HF b, Morasch J b, c Siol S b, Nandy S a, Calmeiro T a, Martins R a, Klein A b, Fortunato E a.  2016.  Highly conductive grain boundaries in copper oxide thin films. Journal of Applied Physics. 119 Abstract
b c Liu A a, b c Liu G a, b c Zhu H a, Shin B d, Fortunato E e, Martins R e, b c Shan F a.  2016.  Hole mobility modulation of solution-processed nickel oxide thin-film transistor based on high-k dielectric. Applied Physics Letters. 108 Abstract
Bahubalindruni PG a, Kiazadeh A b, Sacchetti A b, Martins J b, Rovisco A b, Tavares VG c, Martins R b, Fortunato E b, Barquinha P b.  2016.  Influence of Channel Length Scaling on InGaZnO TFTs Characteristics: Unity Current-Gain Cutoff Frequency, Intrinsic Voltage-Gain, and On-Resistance. Journal of Display Technology. 12:515-518. Abstract
Bahubalindrun P a, Tavares V b, Barquinha P a, De Oliveira PG b, Martins R a, Fortunato E a.  2016.  InGaZnO TFT behavioral model for IC design. Analog Integrated Circuits and Signal Processing. 87:73-80. Abstract
b c Zhu C a, b c Liu A a, b c Liu G a, b c Jiang G a, b c Meng Y a, Fortunato E d, Martins R d, b c Shan F a.  2016.  Low-temperature, nontoxic water-induced high-: K zirconium oxide dielectrics for low-voltage, high-performance oxide thin-film transistors. Journal of Materials Chemistry C. 4:10715-10721. Abstract
Martins J a, Barquinha P a, Goes J b.  2016.  TCAD simulation of amorphous indium-gallium-zinc oxide thin-film transistors. IFIP Advances in Information and Communication Technology. 470:551-557. Abstract