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2016
Bahubalindruni PG a, Tavares V c, Barquinha P b, Martins R b, Fortunato E b.  2016.  Basic analog and digital circuits with a-IGZO TFTs. 2016 13th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design, SMACD 2016. Abstract
Grey P, Pereira L, Pereira S, Barquinha P, Cunha I, Martins R, Fortunato E.  2016.  Electrochemical transistor based on tungsten oxide with optoelectronic properties. IFIP Advances in Information and Communication Technology. 470:542-550. Abstract
c Bahubalindruni PG a, Goes J b, Barquinha P c.  2016.  A high-gain, high-speed parametric residue amplifier for SAR-assisted pipeline ADCs. 2016 13th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design, SMACD 2016. Abstract
b c Liu A a, b c Liu G a, b c Zhu H a, Shin B d, Fortunato E e, Martins R e, b c Shan F a.  2016.  Hole mobility modulation of solution-processed nickel oxide thin-film transistor based on high-k dielectric. Applied Physics Letters. 108 Abstract
Bahubalindruni PG a, Kiazadeh A b, Sacchetti A b, Martins J b, Rovisco A b, Tavares VG c, Martins R b, Fortunato E b, Barquinha P b.  2016.  Influence of Channel Length Scaling on InGaZnO TFTs Characteristics: Unity Current-Gain Cutoff Frequency, Intrinsic Voltage-Gain, and On-Resistance. Journal of Display Technology. 12:515-518. Abstract
Bahubalindrun P a, Tavares V b, Barquinha P a, De Oliveira PG b, Martins R a, Fortunato E a.  2016.  InGaZnO TFT behavioral model for IC design. Analog Integrated Circuits and Signal Processing. 87:73-80. Abstract
Bahubalindruni PG a, Tavares VG b, Borme J c, De Oliveira PG b, Martins R a, Fortunato E a, Barquinha P a.  2016.  InGaZnO thin-film-transistor-based four-quadrant high-gain analog multiplier on glass. IEEE Electron Device Letters. 37:419-421. Abstract
Jin JW a, Nathan A b, Barquinha P c, Pereira L c, Fortunato E c, Martins R c, Cobb B d.  2016.  Interpreting anomalies observed in oxide semiconductor TFTs under negative and positive bias stress. AIP Advances. 6 Abstract
c Bahubalindruni PG a, Tavares VG b, Fortunato E a, Martins R a, Barquinha P a.  2016.  Novel linear analog-adder using a-IGZO TFTs. Proceedings - IEEE International Symposium on Circuits and Systems. 2016-July:2098-2101. Abstract
Martins J a, Barquinha P a, Goes J b.  2016.  TCAD simulation of amorphous indium-gallium-zinc oxide thin-film transistors. IFIP Advances in Information and Communication Technology. 470:551-557. Abstract
Niang KM a, Barquinha PMC b, Martins RFP b, Cobb B c, Powell MJ d, Flewitt AJ a.  2016.  A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under positive gate bias stress. Applied Physics Letters. 108 Abstract