João Pedro Gouveia Xavier

João Pedro Gouveia Xavier, born in 1996, completed his master’s degree in Micro and Nanotechnology Engineering in 2021 at FCT NOVA. He completed an internship at CENIMAT in “Solution Processed 2D ZTO Nanostructures as Transparent Conductors” (2018). In 2021 he defended his master thesis in “Design of

Inverter Based CMOS Amplifiers in Deep Nanoscale Technologies” developed during an internship at Xilinx (currently AMD/Xilinx). He is currently enrolled in a PhD program in the field of microelectronics, designing high-resolution data converters.

The main interests are circuit design, analog design, and data converters.

J. Xavier, P. Barquinha, and J. Goes, “Design of a Ring-Amplifier Robust Against PVT Variations in DeepNanoscale FinFET CMOS,” 36th Conf. Des. Circuits Integr. Syst. DCIS 2021, pp. 3–7, 2021, doi: 10.1109/DCIS53048.2021.9666185.

J. Xavier, D. Leonardo, P. Barquinha, and J. Goes, “Predictive Integrators with Thermal Noise Cancellation,” Proc. - IEEE Int. Symp. Circuits Syst., vol. 2023-May, pp. 1–4, 2023, doi: 10.1109/ISCAS46773.2023.10181999.

J. Xavier, P. Barquinha, and J. Goes, “Systematic Design Methodology for Optimization of Voltage Comparators in CMOS Technology,” in Doctoral Conference on Computing, Electrical and Industrial Systems, 2023, pp. 279–289.

D. Leonardo, J. Xavier, J. Oliveira, and J. Goes, “A Skew-Insensitive Switched Source-Follower Analog Frontend for Time-Interleaved ADCs,” in 2023 18th Conference on Ph.D Research in Microelectronics and Electronics (PRIME), Jun. 2023, pp. 149–152, doi: 10.1109/PRIME58259.2023.10161843.