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2016
Kardarian K a, Nunes D a, b Maria Sberna P a, Ginsburg A c, Keller DA c, Vaz Pinto J a, Deuermeier J a, Anderson AY c, Zaban A c, Martins R a et al..  2016.  Effect of Mg doping on Cu2O thin films and their behavior on the TiO2/Cu2O heterojunction solar cells. Solar Energy Materials and Solar Cells. 147:27-36. Abstract
b c Shan F a, b c Liu A a, Zhu H c, Kong W a, Liu J c, Shin B d, Fortunato E e, Martins R e, b c Liu G a.  2016.  High-mobility p-type NiOx thin-film transistors processed at low temperatures with Al2O3 high-k dielectric. Journal of Materials Chemistry C. 4:9438-9444. Abstract
b c Liu A a, b c Liu G a, b c Zhu H a, Shin B d, Fortunato E e, Martins R e, b c Shan F a.  2016.  Hole mobility modulation of solution-processed nickel oxide thin-film transistor based on high-k dielectric. Applied Physics Letters. 108 Abstract
Bahubalindruni PG a, Kiazadeh A b, Sacchetti A b, Martins J b, Rovisco A b, Tavares VG c, Martins R b, Fortunato E b, Barquinha P b.  2016.  Influence of Channel Length Scaling on InGaZnO TFTs Characteristics: Unity Current-Gain Cutoff Frequency, Intrinsic Voltage-Gain, and On-Resistance. Journal of Display Technology. 12:515-518. Abstract
b c Zhu C a, b c Liu A a, b c Liu G a, b c Jiang G a, b c Meng Y a, Fortunato E d, Martins R d, b c Shan F a.  2016.  Low-temperature, nontoxic water-induced high-: K zirconium oxide dielectrics for low-voltage, high-performance oxide thin-film transistors. Journal of Materials Chemistry C. 4:10715-10721. Abstract
Martins J a, Barquinha P a, Goes J b.  2016.  TCAD simulation of amorphous indium-gallium-zinc oxide thin-film transistors. IFIP Advances in Information and Communication Technology. 470:551-557. Abstract