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2016
b c Liu A a, b c Liu G a, b c Zhu H a, Shin B d, Fortunato E e, Martins R e, b c Shan F a.  2016.  Hole mobility modulation of solution-processed nickel oxide thin-film transistor based on high-k dielectric. Applied Physics Letters. 108 Abstract
b Kiazadeh A a, c Gomes HL b, Barquinha P a, Martins J a, Rovisco A a, Pinto JV a, Martins R a, Fortunato E a.  2016.  Improving positive and negative bias illumination stress stability in parylene passivated IGZO transistors. Applied Physics Letters. 109 Abstract
b c Zhu C a, b c Liu A a, b c Liu G a, b c Jiang G a, b c Meng Y a, Fortunato E d, Martins R d, b c Shan F a.  2016.  Low-temperature, nontoxic water-induced high-: K zirconium oxide dielectrics for low-voltage, high-performance oxide thin-film transistors. Journal of Materials Chemistry C. 4:10715-10721. Abstract