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2016
Grey P, Pereira L, Pereira S, Barquinha P, Cunha I, Martins R, Fortunato E.  2016.  Electrochemical transistor based on tungsten oxide with optoelectronic properties. IFIP Advances in Information and Communication Technology. 470:542-550. Abstract
b c Shan F a, b c Liu A a, Zhu H c, Kong W a, Liu J c, Shin B d, Fortunato E e, Martins R e, b c Liu G a.  2016.  High-mobility p-type NiOx thin-film transistors processed at low temperatures with Al2O3 high-k dielectric. Journal of Materials Chemistry C. 4:9438-9444. Abstract
b c Liu A a, b c Liu G a, b c Zhu H a, Shin B d, Fortunato E e, Martins R e, b c Shan F a.  2016.  Hole mobility modulation of solution-processed nickel oxide thin-film transistor based on high-k dielectric. Applied Physics Letters. 108 Abstract
Jin JW a, Nathan A b, Barquinha P c, Pereira L c, Fortunato E c, Martins R c, Cobb B d.  2016.  Interpreting anomalies observed in oxide semiconductor TFTs under negative and positive bias stress. AIP Advances. 6 Abstract
b c Zhu C a, b c Liu A a, b c Liu G a, b c Jiang G a, b c Meng Y a, Fortunato E d, Martins R d, b c Shan F a.  2016.  Low-temperature, nontoxic water-induced high-: K zirconium oxide dielectrics for low-voltage, high-performance oxide thin-film transistors. Journal of Materials Chemistry C. 4:10715-10721. Abstract
Correia A a, Goes J a, Barquinha P b.  2016.  Oxide TFTs on flexible substrates for designing and fabricating analog-to-digital converters. IFIP Advances in Information and Communication Technology. 470:533-541. Abstract