OFERTA FORMATIVA DCM - FCT/UNL

ยป Home

Biblio

Export 5 results:
Sort by: Author Title Type [ Year (Desc)]
Filters: Keyword is Threshold voltage  [Clear All Filters]
2016
b c Liu A a, b c Liu G a, b c Zhu H a, Shin B d, Fortunato E e, Martins R e, b c Shan F a.  2016.  Eco-friendly, solution-processed In-W-O thin films and their applications in low-voltage, high-performance transistors. Journal of Materials Chemistry C. 4:4478-4484. Abstract
b Kiazadeh A a, c Gomes HL b, Barquinha P a, Martins J a, Rovisco A a, Pinto JV a, Martins R a, Fortunato E a.  2016.  Improving positive and negative bias illumination stress stability in parylene passivated IGZO transistors. Applied Physics Letters. 109 Abstract
Jin JW a, Nathan A b, Barquinha P c, Pereira L c, Fortunato E c, Martins R c, Cobb B d.  2016.  Interpreting anomalies observed in oxide semiconductor TFTs under negative and positive bias stress. AIP Advances. 6 Abstract
Martins J a, Barquinha P a, Goes J b.  2016.  TCAD simulation of amorphous indium-gallium-zinc oxide thin-film transistors. IFIP Advances in Information and Communication Technology. 470:551-557. Abstract
Niang KM a, Barquinha PMC b, Martins RFP b, Cobb B c, Powell MJ d, Flewitt AJ a.  2016.  A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under positive gate bias stress. Applied Physics Letters. 108 Abstract