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2016
b c Liu A a, b c Liu G a, b c Zhu H a, Shin B d, Fortunato E e, Martins R e, b c Shan F a.  2016.  Eco-friendly, solution-processed In-W-O thin films and their applications in low-voltage, high-performance transistors. Journal of Materials Chemistry C. 4:4478-4484. Abstract
b c Shan F a, b c Liu A a, Zhu H c, Kong W a, Liu J c, Shin B d, Fortunato E e, Martins R e, b c Liu G a.  2016.  High-mobility p-type NiOx thin-film transistors processed at low temperatures with Al2O3 high-k dielectric. Journal of Materials Chemistry C. 4:9438-9444. Abstract
b c Liu A a, b c Liu G a, b c Zhu H a, Shin B d, Fortunato E e, Martins R e, b c Shan F a.  2016.  Hole mobility modulation of solution-processed nickel oxide thin-film transistor based on high-k dielectric. Applied Physics Letters. 108 Abstract
Jin JW a, Nathan A b, Barquinha P c, Pereira L c, Fortunato E c, Martins R c, Cobb B d.  2016.  Interpreting anomalies observed in oxide semiconductor TFTs under negative and positive bias stress. AIP Advances. 6 Abstract
b c Zhu C a, b c Liu A a, b c Liu G a, b c Jiang G a, b c Meng Y a, Fortunato E d, Martins R d, b c Shan F a.  2016.  Low-temperature, nontoxic water-induced high-: K zirconium oxide dielectrics for low-voltage, high-performance oxide thin-film transistors. Journal of Materials Chemistry C. 4:10715-10721. Abstract
b c Jiang G a, b c Liu A a, b c Liu G a, b c Zhu C a, b c Meng Y a, Shin B d, Fortunato E e, Martins R e, b c Shan F a.  2016.  Solution-processed high-k magnesium oxide dielectrics for low-voltage oxide thin-film transistors. Applied Physics Letters. 109 Abstract